1 UD4301 n-ch and p-ch fast switching mosfets rating symbol parameter n-ch p-ch units v ds drain-source voltage 40 -40 v v gs gate-sou r ce voltage 20 20 v i d @t c =25 continuous drain current, v gs @ 10v 1 23 -16 a i d @t c =100 continuous drain current, v gs @ 10v 1 18 -12 a i dm pulsed drain current 2 46 -32 a eas single pulse avalanche energy 3 28 39 mj i as avalanche current 17.8 -20.5 a p d @t c =25 total power dissipation 4 25 25 w t stg storage temperature range -55 to 150 -55 to 150 t j operating junction temperature range -55 to 150 -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient (steady state) 1 --- 62 /w r jc thermal resistance junction-case 1 --- 5 /w bvdss rdson id 40v 26m ? 23a -40v 65m ? -16a the UD4301 is the highest performance trench n-ch and p-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UD4301 meet the rohs and green product requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data to252 pin configuration product summery
2 n-ch and p-ch fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 40 --- --- v bv dss / t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.034 --- v/ v gs =10v , i d =12a --- 22 26 r ds(on) static drain-source on-resistance 2 v gs =4.5v , i d =10a --- 28 35 m v gs(th) gate threshold voltage 1.0 1.5 2.5 v v gs(th) v gs(th) temperature coefficient v gs =v ds , i d =250ua --- -4.56 --- mv/ v ds =32v , v gs =0v , t j =25 --- --- 1 i dss drain-source leakage current v ds =32v , v gs =0v , t j =55 --- --- 5 ua i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =5v , i d =12a --- 8 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 2.6 5.2 q g total gate charge (4.5v) --- 5.5 --- q gs gate-source charge --- 1.25 --- q gd gate-drain charge v ds =20v , v gs =4.5v , i d =12a --- 2.5 --- nc t d(on) turn-on delay time --- 8.9 --- t r rise time --- 2.2 --- t d(off) turn-off delay time --- 41 --- t f fall time v dd =20v , v gs =10v , r g =3.3 i d =1a --- 2.7 --- ns c iss input capacitance --- 593 --- c oss output capacitance --- 76 --- c rss reverse transfer capacitance v ds =15v , v gs =0v , f=1mhz --- 56 --- pf symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =10a 9 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 --- --- 23 a i sm pulsed source current 2,6 v g =v d =0v , force current --- --- 46 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1.2 v note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =17.8a 4.the power dissipation is limited by 175 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. n-channel electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics UD4301
3 n-ch and p-ch fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =-250ua -40 --- --- v bv dss / t j bv dss temperature coefficient reference to 25 , i d =-1ma --- -0.015 --- v/ v gs =-10v , i d =-8a --- 52 65 r ds(on) static drain-source on-resistance 2 v gs =-4.5v , i d =-4a --- 80 100 m v gs(th) gate threshold voltage -1.0 -1.6 -2.5 v v gs(th) v gs(th) temperature coefficient v gs =v ds , i d =-250ua --- 3.52 --- v/ v ds =-32v , v gs =0v , t j =25 --- --- 1 i dss drain-source leakage current v ds =-32v , v gs =0v , t j =55 --- --- 5 ua i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =-10v , i d =-10a --- 6 --- s q g total gate charge (-4.5v) --- 5.8 --- q gs gate-source charge --- 1.18 --- q gd gate-drain charge v ds =-20v , v gs =-4.5v , i d =-8a --- 2.12 --- nc t d(on) turn-on delay time --- 13.2 --- t r rise time --- 8 --- t d(off) turn-off delay time --- 40.4 --- t f fall time v dd =-12v , v gs =-10v , r g =3.3 , i d =-1a --- 3.5 --- ns c iss input capacitance --- 620 --- c oss output capacitance --- 69 --- c rss reverse transfer capacitance v ds =-15v , v gs =0v , f=1mhz --- 52 --- pf symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =-25v , l=0.1mh , i as =-10a 9.4 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 --- --- -16 a i sm pulsed source current 2,6 v g =v d =0v , force current --- --- -32 a v sd diode forward voltage 2 v gs =0v , i s =-1a , t j =25 --- --- -1.2 v note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =-25v,v gs =-10v,l=0.1mh,i as =-20.5a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. p-channel electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics UD4301
4 n-ch and p-ch fast switching mosfets 0 2 4 6 8 10 12 0 0.5 1 1.5 2 v ds drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 20 25 30 35 40 246810 v gs (v) r dson (m ? ) i d =12a 0 4 8 12 0.00 0.25 0.50 0.75 1.00 v sd , source-to-drain voltage (v) i s source current(a) t j =150 t j =25 0 2 4 6 8 10 0481216 q g , total gate charge (nc) v gs gate to source voltage (v) v ds =20v i d =12a 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.2 0.5 0.8 1.1 1.4 1.7 2.0 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance n-channel typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. g-s voltage fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j UD4301
5 n-ch and p-ch fast switching mosfets 10 100 1000 1 5 9 13172125 v ds drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0 1 10 100 0.1 1 10 100 v ds (v) i d (a) 10us 100us 10ms 100ms dc t c =25 single pulse 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r jc ) p dm d = t on /t t jpeak = t c + p dm x r jc t on t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive waveform UD4301
6 n-ch and p-ch fast switching mosfets 0 2 4 6 8 10 12 00.511.52 -v ds drain-to-source voltage (v) -i d drain current (a) v gs =-10v v gs =-7v v gs =-5v v gs =-4.5v v gs =-3v 50 90 130 170 210 250 246810 -v gs (v) r dson (m ? ) i d =-8a 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 -v sd , source-to-drain voltage (v) -i s source current(a) t j =150 t j =25 0 2.5 5 7.5 10 04812 q g , total gate charge (nc) -v gs gate to source voltage (v) v ds =-20v i d =-8a 0 0.5 1 1.5 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance p-channel typical characteristics fig.1 typical output characteristics fig.2 on-resistance v.s gate-source fig.3 forward characteristics of reverse fig.4 gate charge characteristics fig.5 normalized v gs(th) v.s t j fig.6 normalized r dson v.s t j UD4301
7 n-ch and p-ch fast switching mosfets 10 100 1000 1 5 9 13172125 -v ds drain to source voltage(v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 -v ds (v) -i d (a) tc=25 o c single pulse 100ms 100us 1ms 10ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r jc ) p dm d = t on /t t jpeak = t c + p dm x r jc t on t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive waveform UD4301
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